BDY94 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high-speed power switch at high voltage. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDY94 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.