BF457 Description
·Collector-Emitter Breakdown Voltage- : VCE= 30V, f=1MHz IC= 30mA ; The information contained herein is presented only as a guide for the applications of our products.
BF457 is NPN Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
BF457 | HIGH VOLTAGE VIDEO AMPLIFIERS |
| BF457 | NPN SILICON RF TRANSISTORS | |
Toshiba |
BF457 | Silicon NPN Transistor |
·Collector-Emitter Breakdown Voltage- : VCE= 30V, f=1MHz IC= 30mA ; The information contained herein is presented only as a guide for the applications of our products.