BF457 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : VCEO(BR) = 160V(Min)- BF457 250V(Min)- BF458 300V(Min)- BF459 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Intended for video output stages in colour and black And white TV receivers ABSOLUTE M

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Datasheet Details

Part number	BF457
Manufacturer	Inchange Semiconductor
File Size	203.88 KB
Description	NPN Transistor
Datasheet	BF457 Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number	Description
BF458	NPN Transistor
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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BF457/458/459 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO(BR) = 160V(Min)- BF457 250V(Min)- BF458 300V(Min)- BF459 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended for video output stages in colour and black And white TV receivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BF457 160 V VCBO Collector-Base Voltage BF458 250 BF459 300 BF457 160 V VCEO Collector-Emitter Voltage BF458 250 BF459 300 VEBO Emitter-Base Voltage 5 V ICM Collector Current-Peak 300 mA IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 mA 1.