BFG425W
DESCRIPTION
- High Power Gain
- High Current Gain Bandwidth Product
- Low Noise Figure
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in RF wideband amplifiers and oscillators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
Junction Temperature
Tstg
Storage Temperature Range
30 m A
6 m A
135 m W
℃
-65~150
℃
BFG425W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS...
