High Power Gain
High Current Gain Bandwidth Product
Low Noise Figure
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in RF wideband amplifiers and oscillators.
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isc Silicon NPN RF Transistor
DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in RF wideband amplifiers and oscillators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
IB
Base Current-Continuous
PC
Collector Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature Range
10
V
4.5
V
1
V
30
mA
6
mA
135
mW
150
℃
-65~150
℃
BFG425W
isc website：www.iscsemi.
BFG425W Datasheet
