BFG520-X
DESCRIPTION
- Low Noise Figure
NF = 1.3 d B TYP. @VCE = 8 V, IC = 10 m A, f = 900 MHz
- High Gain
︱S21︱2 =16d B TYP. @VCE= 8 V,IC = 40 m A,f = 900 MHz
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
Tstg
Storage Temperature Range
VALUE 20 15 2.5 70 0.3 150
-65~150
UNIT V V V m A W ℃ ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor
INCHANGE Semiconductor
BFG520/X
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1m A ; IB= 0
ICBO
Collector Cutoff...
