BFR182TW Overview
MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1 μA hFE DC Current Gain IC=5mA.
| Part number | BFR182TW |
|---|---|
| Datasheet | BFR182TW-INCHANGE.pdf |
| File Size | 218.81 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1 μA hFE DC Current Gain IC=5mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BFR182TW | Silicon NPN Planar RF Transistor | Vishay Telefunken |
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BFR182T | Silicon NPN Planar RF Transistor | Vishay Telefunken |
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BFR182T | NPN Silicon RF Transistor | Infineon Technologies AG |
| BFR182 | NPN Silicon RF Transistor | Siemens Semiconductor Group | |
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BFR182 | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
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