BFR182TW Description
MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1 μA hFE DC Current Gain IC=5mA.
BFR182TW is NPN Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Vishay |
BFR182TW | Silicon NPN Planar RF Transistor |
Vishay |
BFR182T | Silicon NPN Planar RF Transistor |
Infineon |
BFR182T | NPN Silicon RF Transistor |
| BFR182 | NPN Silicon RF Transistor | |
Infineon |
BFR182 | Low Noise Silicon Bipolar RF Transistor |
MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1 μA hFE DC Current Gain IC=5mA.