BMS4007 - N-Channel MOSFET

Datasheet Summary

Features

With TO-220F packaging.
High speed switching.
Low gate input resistance.
Standard level gate drive.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	BMS4007
Manufacturer	INCHANGE
File Size	244.65 KB
Description	N-Channel MOSFET
Datasheet	BMS4007 Datasheet
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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 60 A IDM Drain Current-Single Pulsed 240 A PD Total Dissipation 30 W Tj Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 4.17 ℃/W BMS4007 isc website：www.iscsemi.

Published: Oct 22, 2020 |