Datasheet Details
| Part number | BT136-800E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 155.41 KB |
| Description | Thyristor |
| Datasheet | BT136-800E-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor BT136-800E.
| Part number | BT136-800E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 155.41 KB |
| Description | Thyristor |
| Datasheet | BT136-800E-INCHANGE.pdf |
|
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·With TO-220 packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage 800 V IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current 50HZ 60HZ 4 A 25 27 A PG(AV) Average gate power dissipation ( over any 20 ms period ) 0.5 W Tj Operating junction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BT136-800E ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;
VD=VDRM Rated;
Tj=125℃ VTM On-state voltage IGT Gate-trigger current IT=5A Ⅰ Ⅱ VD =12V;IT=0.1A;
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