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BT137B-600E Datasheet PDF

Inchange Semiconductor BT137B-600E

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. BT137B-600E
Datasheet BT137B-600E Download
Manufacturer
Inchange Semiconductor
Description Triacs
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BT137B-600E datasheet page 1 preview

DESCRIPTION

●With TO-263( D2PAK ) packaging
●Operating in 4 quadrants
●High commutation capability
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Switching applications
●Phase control
●Static switching on inductive or resistive load

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current 50HZ 60HZ PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature BT137B-600E MAX UNIT 600 V 600 V 8 A 65 71 A 0.5 W -40~125 ℃ -40~150 ℃ isc website: isc & iscsemi is registered trademark isc Triacs BT137B-600E

ELECTRICAL CHARACTERISTICS

(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated; VD=VDRM Rated; Tj=125℃ VTM On-state voltage IT=10A IGT...
BT137B-600E page 2 preview