Datasheet Details
| Part number | BT137S-600E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 155.84 KB |
| Description | Thyristor |
| Datasheet | BT137S-600E-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor BT137S-600E.
| Part number | BT137S-600E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 155.84 KB |
| Description | Thyristor |
| Datasheet | BT137S-600E-INCHANGE.pdf |
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·With TO-252( DPAK ) packaging ·Operating in 4 quadrants ·High mutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current 50HZ 60HZ 8 A 65 71 A PG(AV) Average gate power dissipation ( over any 20 ms period ) 0.5 W Tj Operating junction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ isc website：.iscsemi.
isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BT137S-600E ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;
VD=VDRM Rated;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BT137S-600E | Triacs | NXP |
 |
BT137S-600E | 4Q Triac | WeEn |
 |
BT137S-600E | Sensitive Gate Triacs | HAOPIN |
|
BT137S-600 | Triacs | NXP |
|
BT137S-600 | 4Q Triac | WeEn |
| Part Number | Description |
|---|---|
| BT137S-600 | Thyristor |
| BT137S-600D | Thyristor |
| BT137S-800E | Thyristor |
| BT137S-800F | Thyristor |
| BT137 | Triac |
| BT137-500E | Triacs |
| BT137-600E | Triacs |
| BT137-600F | Triacs |
| BT137-800 | Triac |
| BT137-800F | Triac |