Download BT138-600 Datasheet PDF
Inchange Semiconductor
BT138-600
FEATURES - With TO-220 package - .Glass passivated triacs in a plastic envelope, Intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. - Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak off-state voltage IT(RMS) RMS on-state current (full sine wave) ITSM Non-repetitive peak on-state current PGM Peak gate power dissipation PG(AV) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature 600 600 12 95 5 0.5 125 -45~150 UNIT V V A A W W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=125℃ IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=125℃ Ⅰ Gate trigger current Ⅱ Ⅲ VD=12...