Inchange Semiconductor BT138B-600E
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BT138B-600E |
|---|---|
| Datasheet | BT138B-600E Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Thyristor |
| Buy | Stock & Price |
DESCRIPTION
●With TO-263( D2PAK ) packaging●Operating in 4 quadrants
●High commutation capability
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching applications●Phase control
●Static switching on inductive or resistive load
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) ITSM PG(AV) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 600 V 600 V 12 A 95 105 A 0.5 W -40~125 ℃ -40~150 ℃ELECTRICAL CHARACTERISTICS
(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated; VD=VDRM Rated; Tj=125℃ VTM On-state voltage IT=15A IGT Gate-trigger current Ⅰ Ⅱ VD =12V;IT=0.1A; Ⅲ Ⅳ VGT Gate-trigger voltage VD =12V;IT=0...