Datasheet Details
| Part number | BT138X-800E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.47 KB |
| Description | Thyristor |
| Datasheet | BT138X-800E-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor BT138X-800E.
| Part number | BT138X-800E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.47 KB |
| Description | Thyristor |
| Datasheet | BT138X-800E-INCHANGE.pdf |
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·With TO-220F packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) ITSM PG(AV) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current @Tc=56℃ Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 800 V 800 V 12 A 95 105 A 0.5 W -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated;
IDRM Repetitive peak off-state current VD=VDRM Rated;
Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=15A Ⅰ Ⅱ VD =12V;IGT=0.1A Ⅲ Ⅳ VD =12V;IGT=0.1A Half cycle MIN MAX UNIT 500 μA 1.65 V 10 10 10 mA 25 1.5 V 4.0 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BT138X-800E NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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BT138X-800E | 4Q Triac | NXP |
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BT138X-800E | 4Q Triac | WeEn |
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BT138X-800G | Triacs | NXP |
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