With TO-220F packaging
Operating in 4 quadrants
Very high commutation performance maximized at each
gate sensitivity
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Solid state relays;heating and cooking appliances
Switch
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isc Thyristors
INCHANGE Semiconductor
BT139X-600E
DESCRIPTION ·With TO-220F packaging ·Operating in 4 quadrants ·Very high commutation performance maximized at each
gate sensitivity ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VDRM Repetitive peak off-state voltage
600
V
VRRM Repetitive peak reverse voltage
600
V
IT(AV) Average on-state current ITSM Surge non-repetitive on-state current
50HZ 60HZ
16
A
140 150
A
PG(AV) Average gate power dissipation ( over any 20 ms period )
0.5
W
Tj
Operating junction temperature
Tstg Storage temperature
-40~125 ℃ -40~150 ℃
isc website：www.
BT139X-600E Datasheet
