Datasheet Details
| Part number | BT150S-600R |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 154.47 KB |
| Description | Thyristors |
| Datasheet | BT150S-600R-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor BT150S-600R.
| Part number | BT150S-600R |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 154.47 KB |
| Description | Thyristors |
| Datasheet | BT150S-600R-INCHANGE.pdf |
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·With TO-252 packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Line rectifying 50/60 Hz ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average forward current IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current ( 1/2 cycle,half sine wave) PG(AV) Average gate power dissipation ( over any 20ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 600 V 600 V 2.5 A 4 A 50Hz 35 60Hz 38 A 0.5 W -40~125 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BT150S-600R ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=125℃ 0.5 mA VTM On-state voltage ITM= 5A 1.8 V IGT Gate-trigger current VD = 12V;
IT=0.1A 0.2 mA VGT Gate-trigger voltage VD = 12V;
IT=0.1A 1.5 V Rth(j-mb) Thermal resistance Junction to mounting base 3.0 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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