Datasheet Details
| Part number | BT169BW |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 166.20 KB |
| Description | Thyristors |
| Datasheet | BT169BW-INCHANGE.pdf |
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Overview: isc Thyristors BT169BW.
| Part number | BT169BW |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 166.20 KB |
| Description | Thyristors |
| Datasheet | BT169BW-INCHANGE.pdf |
|
|
|
·With SOT-223 packaging ·High surge capability ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak off-state voltage IT(AV) Average on-state current IT(RMS) RMS on-state current PG(AV) Average gate power ITSM Non-repetitive peak on-state current Tj Operating junction temperature Tstg Storage temperature MIN 200 200 0.63 1 0.1 8 -40~110 -40~150 UNIT V V A A W A ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS Repetitive peak off-state voltage VRRM=200V IRRM Repetitive peak reverse voltage VRRM=200V;Tj=110℃ Repetitive peak reverse current VRRM=200V IDRM Repetitive peak off-state current VDRM=200V;Tj=110℃ IGT Gate trigger current VTM On-state voltage IH Holding current VGT Gate trigger voltage VD= 12V;
IT= 10mA IT=2A IGT=0.5mA ,VD=12V VD= 12V;
IT= 10mA MIN MAX UNIT 5 μA 100 5 μA 100 120 μA 1.5 V 5 mA 0.8 V isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BT169BW NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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