BT258X-800R
DESCRIPTION
- With TO-220F packaging
- Long-term stability
- Thyristor for line frequency
- Planar passivated chip
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching applications
- Line rectifying 50/60 Hz
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(AV) Average forward current
IT(RMS) ITSM PG(AV)
RMS on-state current Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tj=25℃ )
Average gate power dissipation
Tj
Operating junction temperature
Tstg Storage temperature
Tc=90℃
50HZ 60HZ
800 800
5 8 75 82 0.5 -40~125 -40~150
UNIT
V V A A A W ℃ ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM
Tj=125℃
VTM On-state voltage
ITM= 16A
Gate-trigger current
VD = 12V; IT=0.1A
VGT...
