Datasheet Details
| Part number | BTA12-800BW |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.47 KB |
| Description | Thyristor |
| Datasheet | BTA12-800BW-INCHANGE.pdf |
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Overview: isc Thyristors BTA12-800BW.
| Part number | BTA12-800BW |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.47 KB |
| Description | Thyristor |
| Datasheet | BTA12-800BW-INCHANGE.pdf |
|
|
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·With TO-220 packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) ITSM PG(AV) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current @Tc=90℃ Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 800 V 800 V 12 A 120 126 A 1.0 W -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VR=VRRM Rated;
IDRM Repetitive peak off-state current VD=VDRM Rated;
Tj=25℃ Tj=125℃ 0.005 1 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=17A VD =12V;RG=30Ω VD =12V;RG=30Ω Half cycle 1.55 V Ⅰ 50 Ⅱ 50 mA Ⅲ 50 1.3 V 2.3 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BTA12-800BW NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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