Datasheet Details
| Part number | BTA140-600 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.83 KB |
| Description | Thyristor |
| Datasheet | BTA140-600-INCHANGE.pdf |
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Overview: isc Thyristors BTA140-600.
| Part number | BTA140-600 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.83 KB |
| Description | Thyristor |
| Datasheet | BTA140-600-INCHANGE.pdf |
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·With TO-220 packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) ITSM PG(AV) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 800 V 800 V 25 A 190 209 A 0.5 W -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;
VD=VDRM Rated;
Tj=125℃ VTM On-state voltage IT=30A IGT Gate-trigger current Ⅰ Ⅱ VD =12V;IT=0.1A Ⅲ Ⅳ VGT Gate-trigger voltage VD =12V;IT=0.1A Rth (j-mb) Junction to mounting base Half cycle MIN MAX UNIT 0.5 mA 1.55 V 35 35 35 mA 70 1.5 V 1.4 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BTA140-600 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BTA140-600 | 4Q Triac | NXP |
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BTA140-600 | 4Q Triac | WeEn |
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BTA140-600G0 | 4Q Triac | NXP |
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BTA140-600G0 | 4Q Triac | WeEn |
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BTA140-600G0T | 4Q Triac | WeEn |
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