Datasheet Details
| Part number | BTA16-400B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 156.30 KB |
| Description | Thyristor |
| Datasheet | BTA16-400B-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor BTA16-400B.
| Part number | BTA16-400B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 156.30 KB |
| Description | Thyristor |
| Datasheet | BTA16-400B-INCHANGE.pdf |
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·With TO-220 packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage 400 V VRRM Repetitive peak reverse voltage IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current 400 V @Tc=80℃ 16 A 50Hz 60Hz 160 170 A PG(AV) Average gate power dissipation ( over any 20 ms period ) 0.5 W Tj Operating junction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTA16-400B ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VR=VRRM Rated;
Tj=25℃ IDRM Repetitive peak off-state current VD=VDRM Rated;
Tj=125℃ 0.01 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage Rth (j-c) Junction to case IT=22.5A VD =12V;RL=33Ω VD =12V;RL=33Ω For DC 1.6 V Ⅰ 50 Ⅱ 50 mA Ⅲ 50 Ⅳ 100 1.5 V 2.9 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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