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BTA16-800BRG Datasheet Thyristor

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors INCHANGE Semiconductor BTA16-800BRG.

General Description

·With TO-220 insulated packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER Max UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage IT(RSM) Average on-state current Tc=15℃ ITSM Surge non-repetitive on-state current 50HZ 60HZ 800 V 16 A 160 168 A PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj=125℃ 1 W Tj Operating junction temperature Tstg Storage temperature -40~125 ℃ -40~150 ℃ isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTA16-800BRG ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;

VD=VDRM Rated;

Tj=25℃ Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=22.5A;tP=380μs Ⅰ Ⅱ VD =12V;RL=33Ω;

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