Datasheet Details
| Part number | BTA216-600E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.58 KB |
| Description | Thyristor |
| Datasheet | BTA216-600E-INCHANGE.pdf |
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Overview: isc Thyristors BTA216-600E.
| Part number | BTA216-600E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.58 KB |
| Description | Thyristor |
| Datasheet | BTA216-600E-INCHANGE.pdf |
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·With TO-220 packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) ITSM PG(AV) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current @Tc=15℃ Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 600 V 600 V 16 A 140 150 A 0.5 W -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN IRRM Repetitive peak reverse current VR=VRRM Rated;
IDRM Repetitive peak off-state current VD=VDRM Rated;
Tj=25℃ Tj=125℃ Tj=150℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=20A Ⅰ VD =12V;RG=30Ω Ⅱ Ⅲ VD =12V;RG=30Ω Half cycle MAX 0.08 0.5 3.0 1.5 10 10 10 1.5 1.2 UNIT mA V mA V ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BTA216-600E NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BTA216-600E | Three quadrant triacs | NXP |
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BTA216-600E | Three quadrant triac | HAOPIN |
|
BTA216-600B | Three quadrant triacs | NXP |
|
BTA216-600B | Three quadrant triacs | HAOPIN |
|
BTA216-600BT | Triacs high commutation | NXP |
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