BTA24-800B Datasheet | Inchange Semiconductor

FEATURES - With TO-220AB insulated package - Suitables for general purpose where high surge current capability is required.Application such as phase control and tatic switching on inductive or resistive load. - Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak off-state voltage IT(RMS) RMS on-state current (full sine wave)Tj=75℃ ITSM Non-repetitive peak on-state current tp=20ms Tj Operating junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient 800 800 25 250 125 -40~150 1.7 60 UNIT V V A A ℃ ℃ ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM, Tj=25℃ VR=VRRM, Tj=125℃ IDRM Repetitive peak off-state current VD=VDRM,Tj=25℃ VD=VDRM, Tj=125℃ Ⅰ 0.005 3.0 0.005 3.0 UNIT m A m A Gate trigger current Ⅱ VD=12V; RL= 33Ω...