BTA24-800CW Datasheet | Inchange Semiconductor

FEATURES - With TO-220AB insulated package - Suitables for general purpose where high surge current capability is required.Phase control and tatic switching on inductive or resistive load. - Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) ITSM Tj RMS on-state current (full sine wave)Tj=90℃ Non-repetitive peak on-state current tp=8.3ms Operating junction temperature Tstg Storage temperature PG(AV) Average gate power dissipation(Tj=125℃) Rth(j-c) Thermal resistance, junction to case 800 800 25 260 125 -45~150 UNIT V V A A ℃ ℃ W ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=125℃ IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM,...