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BTA26-800B Datasheet Thyristor

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors INCHANGE Semiconductor BTA26-800B.

General Description

·With TO-3PN packaging ·Operating in 4 quadrants ·High voltage capability;high current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Applications subject to high temperature ·Heating controls;

high power motor control ·High power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) RSM average on-state current ITSM Surge non-repetitive on-state current Tc=90℃ 50HZ 60HZ PG(AV) Average gate power dissipation ( over any 20 ms period ) @ Tc=125℃ 800 V 800 V 25 A 250 260 A 1 W Tj Operating junction temperature Tstg Storage temperature -40~125 ℃ -40~150 ℃ isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTA26-800B ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;

VD=VDRM Rated;

BTA26-800B Distributor