With TO-3PN packaging
Operating in 4 quadrants
High voltage capability;high current capability
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Applications subject to high temperature
Heating controls; high power motor co
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isc Thyristors
INCHANGE Semiconductor
BTA26-800B
DESCRIPTION ·With TO-3PN packaging ·Operating in 4 quadrants ·High voltage capability;high current capability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Applications subject to high temperature ·Heating controls; high power motor control ·High power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(RSM) RSM average on-state current ITSM Surge non-repetitive on-state current
Tc=90℃
50HZ 60HZ
PG(AV) Average gate power dissipation ( over any 20 ms period ) @ Tc=125℃
800
V
800
V
25
A
250 260
A
1
W
Tj
Operating junction temperature
Tstg Storage temperature
-40~125 ℃ -40
BTA26-800B Datasheet
