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BTA308X-800C Datasheet Thyristor

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors BTA308X-800C.

General Description

·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) ITSM PG(AV) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current @Tc=75℃ Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 800 V 800 V 8 A 60 65 A 0.5 W -40~125 ℃ -40~125 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VR=VRRM Rated;

IDRM Repetitive peak off-state current VD=VDRM Rated;

Tj=25℃ Tj=125℃ 0.01 0.5 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=10A VD =12V;IT=0.1A VD =12V;IT=0.1A Half cycle 1.65 V Ⅰ5 Ⅱ5 Ⅲ5 35 35 mA 35 1.0 V 4.5 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BTA308X-800C NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.

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