Inchange Semiconductor BTA312G-600CT
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.DESCRIPTION
●3Q technology for improved noise immunity●High operating junction temperature
●High voltage capability
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●APPLICATIONS
subject to high temperature●Electronic thermostats (heating and cooling)
●High power motor controls e.g. washing machines and vacuum cleaners
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RMS) Repetitive peak off-state voltage Repetitive peak reverse voltage RMS on-state current ITSM Surge non-repetitive on-state current ,tp=20ms Tj Operating junction temperature Tstg Storage temperature MIN UNIT 600 V 600 V 12 A 100 A -40~150 ℃ -40~150 ℃ELECTRICAL CHARACTERISTICS
(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current VR=VRRM Rated; VD=VDRM Rated; Tj=150℃ VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IH Holding current IT=15A Ⅰ VD =12V...