Datasheet Details
| Part number | BTA312X-600D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 154.13 KB |
| Description | Thyristor |
| Datasheet | BTA312X-600D-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor BTA312X-600D.
| Part number | BTA312X-600D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 154.13 KB |
| Description | Thyristor |
| Datasheet | BTA312X-600D-INCHANGE.pdf |
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·With TO-220F packaging ·High operating junction temperature ·Very high mutation performancemaximized at each gate sensitivity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High temperature, high power motor control ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average on-state current ITSM Surge non-repetitive on-state current 50HZ 60HZ PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MIN UNIT 600 V 600 V 12 A 95 105 A 0.5 W -40~150 ℃ -40~150 ℃ isc website：.iscsemi.
isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTA312X-600D ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;
VD=VDRM Rated;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BTA312X-600D | 3Q Hi-Com Triac | NXP |
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BTA312X-600D | 3Q Hi-Com Triac | WeEn |
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BTA312X-600B | 3Q Hi-Com Triac | NXP |
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BTA312X-600B | 3Q Hi-Com Triac | WeEn |
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BTA312X-600C | 3Q Hi-Com Triac | NXP |
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