Datasheet Details
| Part number | BTA316B-800C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.10 KB |
| Description | Thyristor |
| Datasheet | BTA316B-800C-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor BTA316B-800C.
| Part number | BTA316B-800C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.10 KB |
| Description | Thyristor |
| Datasheet | BTA316B-800C-INCHANGE.pdf |
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·With TO-263( D2PAK ) packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(RSM) ITSM PG(AV) Repetitive peak reverse voltage Average on-state current Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 800 V 800 V 16 A 140 160 A 0.5 W -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;
VD=VDRM Rated;
Tj=150℃ VTM On-state voltage IT=18A IGT Gate-trigger current Ⅰ Ⅱ VD =12V;IT=0.1A Ⅲ Ⅳ VGT Gate-trigger voltage VD =12V;IT=0.1A Rth (j-mb) Junction to mounting base Half cycle MIN MAX UNIT 8.5 mA 1.5 V 35 35 35 mA 70 1.5 V 1.7 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTA316B-800C NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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