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BTA80-800B Datasheet Thyristor

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors BTA80-800B.

General Description

·With TO-P4 packaging ·Advanced technology to provide customers with high commutation performances ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current ITSM Surge non-repetitive on-state current Tj Operating junction temperature Tstg Storage temperature MAX UNIT 800 V 800 V 80 A 800 A -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM IDRM Repetitive peak off-state current VD=VDRM VTM On-state voltage IT=120A Ⅰ IGT Gate-trigger current Ⅱ VD =12V;RL=10Ω;

Ⅲ Ⅳ VGT Gate-trigger voltage IH Holding current VD =12V;RL=10Ω;

MIN MAX UNIT 1.5 mA 1.5 V 50 50 mA 50 80 1.3 V 80 mA isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BTA80-800B NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.