BTB06-600C
BTB06-600C is Thyristor manufactured by Inchange Semiconductor.
DESCRIPTION
- With TO-220 packaging
- Can be operated in 4 quadrants
- Advanced technology to provide customers with high mutation performances
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
UNIT
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(RSM) RSM on-state current
Tc=110℃
ITSM Surge non-repetitive on-state current
50HZ 60HZ
PG(AV) Average gate power dissipation ( over any 20 ms period ) @ Tc=125℃
60 63
Tj
Operating junction temperature
Tstg Storage temperature
-40~125 ℃ -40~150 ℃ isc website：.iscsemi. isc & iscsemi is registered trademark isc Thyristors
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current
VR=VRRM Rated; Tj=25℃ VD=VDRM Rated; Tj=125℃
VTM On-state voltage
Gate-trigger current
VGT Gate-trigger voltage Rth( j-c) Junction to case
IT=5.5A；t P=380μs
Ⅰ Ⅱ VD =12V;RL=30Ω; Ⅲ...
