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BTB06-600C Datasheet Thyristor

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors INCHANGE Semiconductor BTB06-600C.

General Description

·With TO-220 packaging ·Can be operated in 4 quadrants ·Advanced technology to provide customers with high commutation performances ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage IT(RSM) RSM on-state current Tc=110℃ ITSM Surge non-repetitive on-state current 50HZ 60HZ PG(AV) Average gate power dissipation ( over any 20 ms period ) @ Tc=125℃ 600 V 6 A 60 63 A 1 W Tj Operating junction temperature Tstg Storage temperature -40~125 ℃ -40~150 ℃ isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTB06-600C ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;

Tj=25℃ VD=VDRM Rated;

Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage Rth( j-c) Junction to case IT=5.5A;tP=380μs Ⅰ Ⅱ VD =12V;RL=30Ω;

BTB06-600C Distributor