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BTB08-400B Datasheet Thyristor

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors BTB08-400B.

General Description

·With TO-220 packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) ITSM PG(AV) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current @Tc=90℃ Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 400 V 400 V 8 A 80 84 A 1.0 W -40~110 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VR=VRRM Rated;

IDRM Repetitive peak off-state current VD=VDRM Rated;

Tj=25℃ Tj=125℃ 0.01 0.5 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=11A VD =12V;RG=33Ω VD =12V;RG=33Ω Half cycle 1.75 V Ⅰ 50 Ⅱ Ⅲ 50 50 mA Ⅳ 100 1.5 V 3.2 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BTB08-400B NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.

BTB08-400B Distributor

Similar Datasheet

Brand Logo Part Number Description Manufacturer
ST Microelectronics Logo BTB08-400B TRIACS ST Microelectronics
ST Microelectronics Logo BTB08-400A SENSITIVE GATE TRIACS ST Microelectronics
ST Microelectronics Logo BTB08-400S SENSITIVE GATE TRIACS ST Microelectronics

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