BTW69-1000 Datasheet | Inchange Semiconductor

isc Thyristors APPLICATIONS - Available in high power packages, BTW69 Series is suitable in applications where power handling and power dissipation are critical, uch as solid state relays, welding equipment, high power motor - Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average on-stage current , Tc=70°C IT(RMS) RMS on-state current Tc=70°C ITSM Surge non-repetitive on-state current PG(AV) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature TP=10ms 1000 1000 32 50 500 1 -40~125 -40~150 UNIT V V A A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM, IDRM Repetitive peak off-state current VDM=VDRM, Tj=25℃ Tj=125℃ Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 100A MIN MAX UNIT 10 μA 5 m A 10 μA 5 m A 1.75 V Gate-trigger current VD = 12 V, Rl= 33Ω 80 m A VGT Gate-trigger voltage VD = 12 V, Rl= 33Ω 1.3...