Datasheet Details
| Part number | BTW69-1200N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 153.87 KB |
| Description | Thyristors |
| Datasheet | BTW69-1200N-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor BTW69-1200N.
| Part number | BTW69-1200N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 153.87 KB |
| Description | Thyristors |
| Datasheet | BTW69-1200N-INCHANGE.pdf |
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·With TO-3P packaging ·High mutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Battery charging system ·Uninterruptible power supply ·Variable speed motor drive ·Industrial welding systems ·By pass AC switch ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current @Tc=102℃ 50 A 50Hz 60Hz 763 700 A PG(AV) Average gate power dissipation ( over any 20 ms period ) @Tc=125℃ 1 W Tj Operating junction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ isc website：.iscsemi.
isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTW69-1200N ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated;
Tj=25℃ VD=VDRM Rated;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BTW69-1200N | SCR thyristor | STMicroelectronics |
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BTW69-1200N | Thyristors | SGS-THOMSON |
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BTW69-1200 | SCR | ST Microelectronics |
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