Datasheet Details
| Part number | BTW69-600RG |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 164.25 KB |
| Description | Thyristors |
| Datasheet | BTW69-600RG-INCHANGE.pdf |
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Overview: isc Thyristors.
| Part number | BTW69-600RG |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 164.25 KB |
| Description | Thyristors |
| Datasheet | BTW69-600RG-INCHANGE.pdf |
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·With TO-3P packaging ·High mutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Battery charging system ·Uninterruptible power supply ·Variable speed motor drive ·Industrial welding systems ·By pass AC switch BTW69-600RG ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) ITSM PG(AV) Average on-state current @Tc=75℃ Surge non-repetitive on-state current 50Hz 60Hz Average gate power dissipation ( over any 20 ms period ) @Tc=125℃ Tj Operating junction temperature Tstg Storage temperature MAX UNIT 600 V 600 V 50 A 580 610 A 1 W -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated;
Tj=25℃ IDRM Repetitive peak off-state current VD=VDRM Rated;
Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IT=100A;tP=380μs VD =12V;RL=33Ω VD =12V;RL=33Ω Rth (j-c) Junction to case For AC MIN MAX UNIT 10 μA 5 mA 1.9 V 80 mA 1.3 V 0.9 ℃/W isc website：.iscsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BTW69-600 | SCR | ST Microelectronics |
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BTW69-600N | (BTW69-xxxN) Thyristors | ST Microelectronics |
| Part Number | Description |
|---|---|
| BTW69-1000 | Thyristors |
| BTW69-1000RG | Thyristors |
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| BTW69-1200 | Thyristors |
| BTW69-1200N | Thyristors |
| BTW69-700RG | Thyristors |
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