Datasheet Details
| Part number | BU133 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.08 KB |
| Description | NPN Transistor |
| Datasheet | BU133-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BU133.
| Part number | BU133 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.08 KB |
| Description | NPN Transistor |
| Datasheet | BU133-INCHANGE.pdf |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min.) ·Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV receiver’s chopper supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 750 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC= 50℃ TJ Junction Temperature 3 A 30 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.33 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU133 | SILICON POWER TRANSISTOR | SavantIC |
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