BU222A
BU222A is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Collector-Base Breakdown Voltage-
: V(BR)CBO= 525V (Min)
- High Current Capability
- High Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching regulators
- General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
℃
Tstg
Storage Temperature Range
-65~150 ℃
BU222A isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power...
