Datasheet Details
| Part number | BU222A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.79 KB |
| Description | NPN Transistor |
| Datasheet | BU222A-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BU222A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.79 KB |
| Description | NPN Transistor |
| Datasheet | BU222A-INCHANGE.pdf |
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·High Collector-Base Breakdown Voltage- : V(BR)CBO= 525V (Min) ·High Current Capability ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 525 V VCEO Collector-Emitter Voltage 475 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU222A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU222A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU22210MUV | 10-bit D/A Converters | ROHM |
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