BU222A Description
·High Collector-Base Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU222A TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA.