Datasheet Details
| Part number | BU304F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.22 KB |
| Description | NPN Transistor |
| Datasheet | BU304F-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | BU304F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.22 KB |
| Description | NPN Transistor |
| Datasheet | BU304F-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BU304F 400V(Min)- BU305F ·Collector Current-4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BU304F 600 VCBO Collector-Base Voltage V BU305F 700 BU304F 300 VCEO Collector-Emitter Voltage V BU305F 400 VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 16 A IB Base Current 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 18 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case isc website：www.iscsemi.com 6.12 ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BU306F/307F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage BU304F BU305F IC= 50mA ;IB= 0 300 V 400 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A;
| Part Number | Description |
|---|---|
| BU305F | NPN Transistor |
| BU306F | NPN Transistor |
| BU307F | NPN Transistor |
| BU323A | NPN Transistor |
| BU323AP | NPN Transistor |
| BU323P | NPN Transistor |
| BU323Z | NPN Transistor |
| BU326 | NPN Transistor |
| BU326A | NPN Transistor |
| BU326S | NPN Transistor |