With TO-220 packaging
Very high DC current gain
Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
AC-DC motor control
Electronic ignition
Full PDF Text Transcription for BU323Z (Reference)
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BU323Z. For precise diagrams, and layout, please refer to the original PDF.
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BU323Z DESCRIPTION ·With TO-220 packaging ·Very high DC current gain ·Monolithic darlington transistor ...
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ackaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current- Continuous 3 A PC Collector Power Dissipation 150 W Tj Junction Temperature 175 ℃ Tstg Storage Tem
BU323Z Datasheet
