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BU323Z - NPN Transistor

Datasheet Summary

Description

With TO-220 packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control Electronic ignition

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Datasheet Details

Part number BU323Z
Manufacturer INCHANGE
File Size 211.30 KB
Description NPN Transistor
Datasheet download datasheet BU323Z Datasheet
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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BU323Z DESCRIPTION ·With TO-220 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current- Continuous 3 A PC Collector Power Dissipation 150 W Tj Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃
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