Datasheet Details
| Part number | BU415 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.69 KB |
| Description | NPN Transistor |
| Datasheet | BU415-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BU415 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.69 KB |
| Description | NPN Transistor |
| Datasheet | BU415-INCHANGE.pdf |
|
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·Collector-Emitter Sustaining Voltag- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal output and high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak Repetitive 15 A PC Collector Power Dissipation @ TC=25℃ 120 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU415 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 ICBO Collector Cutoff Current VCB= 800V;
IE=0 IEBO Emitter Cutoff Current VEB= 6V;
| Part Number | Description |
|---|---|
| BU415B | NPN Transistor |
| BU406 | NPN Transistor |
| BU406D | NPN Transistor |
| BU406F | NPN Transistor |
| BU406FI | NPN Transistor |
| BU406H | NPN Transistor |
| BU407 | NPN Transistor |
| BU407D | NPN Transistor |
| BU407F | NPN Transistor |
| BU407FI | NPN Transistor |