With TO-247 packaging
Large collector current
Low collector saturation voltage
High power dissipation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in DC-DC converter
Driver of solenoid or motor
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isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-247 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
14
A
ICM
Peak Collector Current
30
A
IC
Base Current
8
A
PC
Collector Power Dissipation@TC=75℃
125
W
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R
BU4525DW Datasheet
