Datasheet Details
| Part number | BU536 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.23 KB |
| Description | NPN Transistor |
| Datasheet | BU536-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BU536.
| Part number | BU536 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.23 KB |
| Description | NPN Transistor |
| Datasheet | BU536-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 480V(Min.) ·High Speed Switching ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage RBE≈100Ω 1100 V VCES Collector-Emitter Voltage 1100 V VCEO Collector-Emitter Voltage 480 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 62 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU536 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU536 | Silicon NPN Power Transistor | Telefunken Microelectronics |
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BU536 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| BU505 | NPN Transistor |
| BU505D | NPN Transistor |
| BU505DF | NPN Transistor |
| BU505F | NPN Transistor |
| BU506 | NPN Transistor |
| BU506A | NPN Transistor |
| BU506D | NPN Transistor |
| BU506DF | NPN Transistor |
| BU506F | NPN Transistor |