Inchange Semiconductor BU606D
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BU606D |
|---|---|
| Datasheet | BU606D Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Fast Switching Speed- : tf= 0.75μs(Max)●Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A
●Built-in Damper Diode
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in horizontal deflection output stages of TV’s and CRT’sABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak Repetitive 10 A ICP Collector Current- Peak (10ms) 15 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 90 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU606D isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU606DELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaini...