BU606D Overview
tf= 0.75μs(Max) ·Low Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU606D TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 200 V VEBO Emitter-Base Breakdown Voltage IE= 200mA;.