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BU903 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor BU903.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 550V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power supplies and deflection circuits for color receivers and monitors.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage VBE=0 1350 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 2 A IBM Base Current-Peak 4 A IE Emitter Current-Continuous 8 A IEM Emitter Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU903 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB= 0 550 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3.2A;

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