Datasheet Details
| Part number | BU908 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.00 KB |
| Description | NPN Transistor |
| Datasheet | BU908-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BU908.
| Part number | BU908 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.00 KB |
| Description | NPN Transistor |
| Datasheet | BU908-INCHANGE.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Power Dissipation- : PD= 125W@TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV horizontal deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU908 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU908 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| BU902 | NPN Transistor |
| BU903 | NPN Transistor |
| BU911 | NPN Transistor |
| BU920 | NPN Transistor |
| BU920PFI | NPN Transistor |
| BU920T | NPN Transistor |
| BU921 | NPN Transistor |
| BU921P | NPN Transistor |
| BU921PFI | NPN Transistor |
| BU921T | NPN Transistor |