Inchange Semiconductor BU932R
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BU932R |
|---|---|
| Datasheet | BU932R Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Voltage●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High ruggedness electronic ignitions●High voltage ignition coil driver
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 450 VEBO Emitter-Base Voltage 5 IC Collector Current 15 ICM Collector Current-peak 30 IB Base Current 1 IBM Base Current-peak 5 PC Collector Power Dissipation @TC=25℃ 175 Tj Junction Temperature 150 Tstg Storage Temperature Range -40~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.08 ℃/W BU932R isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU932RELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 450 V V CE(sat) Collector-Emitter Saturation Vo...