Inchange Semiconductor BUF405AFP
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.BUF405AFP Specifications
- Max Collector Current : 7.5A
- Terminals : 3
- Collector Emitter Voltage : 450V
- Max Power Dissipation : 39W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | BUF405AFP |
|---|---|
| Datasheet | BUF405AFP Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.)●High Speed Switching
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high reliability industrial and professional power driving applications such as motor drivers and off-line switching power supplies.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VCEV Collector-Emitter Voltage VBE= -1.5V 1000 VCEO Collector-Emitter Voltage 450 UNIT V V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7.5 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 3 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4.5 A 39 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.2 ℃/W BUF405AFP isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUF405AFPELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.