Inchange Semiconductor BUK436-100A
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BUK436-100A |
|---|---|
| Datasheet | BUK436-100A Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●Drain Source Voltage- : VDSS=100V(Min)●Low RDS(ON)
●Fast Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage Drain BUK436-100A ID Current-continuou s@ TC=25℃ BUK436-100B Ptot Total Dissipation@TC=25℃ ±30 V 33 A 31 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55-150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 45 ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor BUK436-100A/B●
ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR...