BUK444-600B datasheet by Inchange Semiconductor.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BUK444-600B |
|---|---|
| Datasheet | BUK444-600B BUK444-600A Datasheet (PDF) |
| File Size | 226.13 KB |
| Manufacturer | Inchange Semiconductor |
| Description | N-Channel MOSFET |
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Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range 150 ℃ isc website：.iscsemi. 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor BUK444-600A/B · (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA 600 V VGS(th) Gate Threshold Voltage VDS=VGS;.
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BUK444-600A | N-Channel MOSFET |
| BUK444-200A | N-Channel MOSFET |
| BUK444-200B | N-Channel MOSFET |
| BUK444-800A | N-Channel MOSFET |
| BUK444-800B | N-Channel MOSFET |
| BUK445-100A | N-Channel MOSFET |
| BUK445-100B | N-Channel MOSFET |
| BUK445-400A | N-Channel MOSFET |
| BUK445-400B | N-Channel MOSFET |
| BUK445-600A | N-Channel MOSFET |
