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isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
Drain
BUK454-200A
ID
Current-continuou
s@ TC=37℃
BUK454-200B
Ptot
Total Dissipation@TC=25℃
±30
V
9.2 A
8.2
90
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
175
℃
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.