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BUK9518-55A - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on) ≤16mΩ.
  • Fully characterized avalanche voltage and current.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor BUK9518-55A ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤16mΩ ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Automotive and general purpose power switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 61 IDM Drain Current-Single Pulsed 246 PD Total Dissipation @TC=25℃ 136 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 1.1 UNIT ℃/W isc website：www.iscsemi.